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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
Silicon MOSFET Power Transistor 30MHz,70W DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING
4-C2
24.0+/-0.6
*High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz *High Efficiency: 60%typ.on HF Band
2
10.0+/-0.3
FEATURES
9.6+/-0.3
0.1 -0.01
3
+0.05
R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 50 +/-20 150 5 20 175 -40 to +175 1.0 UNIT V V W
W A C C C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=30MHz ,VDD=12.5V Pin=3.5W,Idq=1.0A VDD=15.2V,Po=70W(Pin Control) f=30MHz,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.5 70 55 LIMITS TYP MAX. 10 1 4.5 80 60 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HHF1
3.3+/-0.2
MITSUBISHI ELECTRIC
1/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
Silicon MOSFET Power Transistor 30MHz,70W TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
200 CHANNEL DISSIPATION Pch(W) 160
80 40 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
120
0
1
2
3 4 Vgs(V)
5
6
7
Vds-Ids CHARACTERISTICS 10
Ta=+25C
Vds VS. Ciss CHARACTERISTICS 300
Vgs=6V Vgs=5.7V Vgs=5.4V Ta=+25C f=1MHz
8 6 4 2 0 0 2 4 6 Vds(V) 8 10
250 200 Ciss(pF) 150 100 50 0 0
Ids(A)
Vgs=5.1V Vgs=4.8V Vgs=4.5V Vgs=4.2V
10 Vds(V)
20
30
Vds VS. Coss CHARACTERISTICS 500 400 Coss(pF) 300 200 100 0 0 10 Vds(V) 20 30
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 40
Ta=+25C f=1MHz
30 Crss(pF)
20
10
0 0 10 Vds(V) 20 30
RD70HHF1
MITSUBISHI ELECTRIC
2/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Pin-Po CHARACTERISTICS
Silicon MOSFET Power Transistor 30MHz,70W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10
Ta=+25C f=30MHz Vdd=12.5V Idq=1A Po
100 Pout(W) , Idd(A) 80 60 40 20 0 d(%)
100 80 60 40 20 0 0 1
Po
100
d
80 60 d(%)
Gp
Idd
Ta=25C f=30MHz Vdd=12.5V Idq=1A
40 20 0
0 0 10 20 Pin(dBm) 30
2 3 Pin(W)
4
Vdd-Po CHARACTERISTICS 120 100 80 Po(W) 60 40 20 0 2 4 6 8 10 Vdd(V) 12 14
Ta=25C f=30MHz Pin=3.5W Idq=1A Zg=ZI=50 ohm Po
Vgs-Ids CHARACTORISTICS 2 +25C 30 25 20 Idd(A) 10 8 6 4 2 0 0 1 2 3 4 Vgs(V) 5 6 7
Vds=10V Tc=-25~+75C
Idd
15 10 5 0
Ids(A)
+75C
-25C
Vgs-gm CHARACTORISTICS 6 5 4
Vds=10V Tc=-25~+75C
gm(S)
3 2 1 0 0 1 2 3 4 Vgs(V)
+75C -25C +25C
5
6
RD70HHF1
MITSUBISHI ELECTRIC
3/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Silicon MOSFET Power Transistor 30MHz,70W TEST CIRCUIT(f=30MHz)
Vgg
Vdd 330uF,50V C1 L2
C1 220pF C1 C2 Pin 1 OHM 220pF L3
10K OHM 33uF,50V 330 OHM 200pF 180pF L1 C1 68pF*3 330pF 33pF 47pF Pout L4 180pF 200pF 68pF*3 330pF 33pF 1000pF 47pF
16 25 78 89 93 100
4.5 16 20 23 26 43 58 61 66 92 100 12 8
C1:100pF, 0.022uF, 0.1uF in parallel C2:470uF*2 in parallel L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire L3:5Turns,I.D6mm,D0.7mm copper wire P=0.5mm L4:1Turns,I.D10mm,D1.6mm silver plateted copper wire Dimensions:mm
14 Note:Board material-teflon substrate micro strip line width=4.2mm / 50 OHM,er:2.7,t=1.6mm
RD70HHF1
MITSUBISHI ELECTRIC
4/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Zo=10
Silicon MOSFET Power Transistor 30MHz,70W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=30MHz Zout
f=30MHz Zin
Zin , Zout f (MHz) 30 Zin (ohm) 5.28-j20.08 Zout (ohm) 0.77-j0.22 Conditions Po=97W, Vdd=12.5V,Pin=3.5W
RD70HHF1
MITSUBISHI ELECTRIC
5/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Silicon MOSFET Power Transistor 30MHz,70W
RD70HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA)
Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.837 0.838 0.842 0.872 0.899 0.917 0.931 0.941 0.950 0.953 0.957 0.960 0.967 0.967 0.971 0.969 0.970 0.969 0.974 0.973 0.971 0.976 (ang) -155.8 -170.6 -173.0 -174.1 -174.9 -175.9 -176.8 -177.7 -178.6 -179.4 179.9 179.1 178.4 177.7 177.3 176.5 175.6 175.1 174.8 174.0 173.1 172.5 S21 (mag) (ang) 39.860 97.0 13.625 82.2 8.074 75.1 3.731 60.3 2.183 47.0 1.408 38.4 1.010 31.6 0.734 25.1 0.570 21.5 0.455 17.2 0.361 13.3 0.302 11.1 0.254 7.3 0.211 7.4 0.185 5.8 0.162 0.5 0.160 2.7 0.132 1.8 0.122 -4.3 0.117 -5.2 0.100 0.0 0.087 -0.5 S12 (mag) 0.013 0.012 0.012 0.010 0.009 0.007 0.006 0.005 0.004 0.003 0.003 0.001 0.004 0.003 0.006 0.005 0.005 0.007 0.007 0.009 0.011 0.011 (ang) 2.0 -8.7 -7.4 -24.2 -41.5 -39.3 -23.3 -46.3 -17.5 29.2 -4.5 105.8 65.8 96.5 71.6 96.8 72.1 81.0 73.6 87.1 77.5 73.8 (mag) 0.776 0.770 0.784 0.824 0.864 0.893 0.931 0.931 0.944 0.964 0.952 0.959 0.966 0.962 0.973 0.969 0.965 0.976 0.970 0.970 0.972 0.972 S22 (ang) -159.3 -171.5 -171.7 -171.3 -173.2 -173.6 -175.3 -176.5 -177.5 -178.6 -179.5 179.4 178.4 178.0 177.0 176.0 175.7 174.6 174.4 174.0 172.7 172.6
RD70HHF1
MITSUBISHI ELECTRIC
6/7
REV.5 2 APRIL. 2004
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Silicon MOSFET Power Transistor 30MHz,70W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RD70HHF1
MITSUBISHI ELECTRIC
7/7
REV.5 2 APRIL. 2004

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